ALGV12S300CG(S)
Overview
ALGV12S300CG(S) is an internally pre-matched gallium nitride (GaN) high electron mobility power HEMT. With an operating voltage of 50 V, it provides a general wideband solution for various RF and microwave applications. Featuring high efficiency and high gain, it is an ideal choice for linear and saturated amplifier circuits.
Characteristics
Characteristics measured at test frequencies ranging from 1030 MHz to 1090 MHz
Ø Power gain: 20.3 dB
ØPsat efficiency: 67%
Typical Characteristics （1030-1090MHz）
Test Conditions: Supply: VGS=-2.99V VDS=48V IDQ=150mA Signal Type: Pulse, Duty Cycle: 10%, Pulse Width: 100 μs
Freq（MHz） | Pin(dBm) | P3out(dBm) | Pout(W) | Gain（db） | Eff（%） |
1030 | 37.0 | 56.2 | 416.9 | 19.2 | 66.8 |
1040 | 36.3 | 56.1 | 407.4 | 19.8 | 69.0 |
1050 | 35.6 | 55.9 | 389.0 | 20.3 | 68.7 |
1060 | 34.8 | 55.8 | 380.2 | 21.0 | 66.6 |
1070 | 35.2 | 55.8 | 380.2 | 20.6 | 66.6 |
1080 | 35.4 | 55.9 | 389.0 | 20.5 | 68.1 |
1090 | 35.6 | 55.8 | 380.2 | 20.2 | 68.9 |
Package Dimensions
中文版
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