ALGV12P1K2CKP(S)
Overview
ALGV12P1K2CKP(S) is an externally matched gallium nitride (GaN) high electron mobility power HEMT. Operating at a supply voltage of 50 V, it provides a general wideband solution for various RF and microwave applications. Featuring high efficiency, high gain and wide bandwidth performance, it is an ideal choice for linear and saturated amplifier circuits.
Characteristics
u GaN-on-SiC HEMT technology
u Operating frequency range: 1030 to 1090 MHz
u Input pre-matched
u Typical values measured at 1070 MHz
ØDC supply voltage: 50 V
Ø Power gain: 17.9 dB
Ø Typical output power: 1047.1 W
Ø Psat efficiency: 60.5%
Pb-free and RoHS compliant
Typical Characteristics（1030-1090MHz）
Test Conditions: Supply: VGS=-3.16V VDS=50V IDQ=400mA Signal mode: One-tone Continued CW.
Freq（MHz） | Pin(dBm) | Pout(dBm) | Pout(W) | IDS（A） | Gain（db） | Eff（%） |
1030 | 42.8 | 60.9 | 1230.3 | 3.93 | 18.1 | 62.6 |
1040 | 42.3 | 60.7 | 1174.9 | 3.77 | 18.4 | 62.3 |
1050 | 42.3 | 60.4 | 1096.5 | 3.65 | 18.1 | 60.1 |
1060 | 42.6 | 60.4 | 1096.5 | 3.59 | 17.8 | 61.1 |
1070 | 42.3 | 60.2 | 1047.1 | 3.46 | 17.9 | 60.5 |
1080 | 41.3 | 60.4 | 1096.5 | 3.40 | 19.1 | 64.5 |
1090 | 41.3 | 60.6 | 1148.2 | 3.33 | 19.3 | 69.0 |
Package Dimensions
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