ALGV12S300CG(S)
概述
ALGV12S300CG(S) is an internally pre-matched gallium nitride (GaN) high electron mobility power HEMT. With an operating voltage of 50 V, it provides a general wideband solution for various RF and microwave applications. Featuring high efficiency and high gain, it is an ideal choice for linear and saturated amplifier circuits.
特性
u 测试频率为1030到1090MHz 时的特性
Ø 20.3dB 功率增益
Ø Psat 效率为 67%
典型特性 （1030-1090MHz）
测试条件 供电：VGS=-2.99V VDS=48V IDQ=150mA 信号制式：脉冲 占空比：10% 脉冲宽度：100us
频率（MHz） | 输入功率(dBm) | P3输出功率(dBm) | P3输出功率(W) | 增益（db） | 效率 （%） |
1030 | 37.0 | 56.2 | 416.9 | 19.2 | 66.8 |
1040 | 36.3 | 56.1 | 407.4 | 19.8 | 69.0 |
1050 | 35.6 | 55.9 | 389.0 | 20.3 | 68.7 |
1060 | 34.8 | 55.8 | 380.2 | 21.0 | 66.6 |
1070 | 35.2 | 55.8 | 380.2 | 20.6 | 66.6 |
1080 | 35.4 | 55.9 | 389.0 | 20.5 | 68.1 |
1090 | 35.6 | 55.8 | 380.2 | 20.2 | 68.9 |
封装尺寸
中文版
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