Founded in 2024, Shenzhen Dreamway IC Technology Co., Ltd. is a high-tech enterprise focusing on the design and R&D of microwave and radio frequency (RF) transistors. The company mainly engages in gallium nitride (GaN) high electron mobility transistor (HEMT) products, which are applied in industries such as wireless communication and RF energy.

The core team members of the company have profound academic attainments and rich practical experience in semiconductor materials, device design, process manufacturing and application engineering, with an average working experience of more than 15 years. Relying on their keen insight into cutting-edge technologies and outstanding innovation capabilities, they continuously lead the company to forge ahead in the front of RF power transistor technology R&D, ensuring that the products always meet market demands and maintain industry-leading advantages.

Through independent R&D, the company has successfully launched a series of GaN power transistor products with the characteristics of high voltage resistance, low on-resistance and high switching speed. Their performance indicators stand out among similar products and are widely used in 5G base stations, anti-drone modules, etc., effectively meeting the urgent needs of various industries for high-performance power semiconductor devices.

The company provides full-life-cycle services from product design, sample supply, product delivery to technical support, and is committed to providing competitive domestic RF transistors for well-known domestic and foreign communication enterprises.